Reliable integration of a high performance multi-chip half-bridge SiC power module
Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Online Access: | http://eprints.nottingham.ac.uk/37317/ http://eprints.nottingham.ac.uk/37317/1/Reliable%20integration%20of%20a%20high%20performance%20multi-chip%20half-bridge%20SiC%20power%20module.pdf |