Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy....

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Main Authors:	Vdovin, Evgeny E., Mishchenko, A., Greenaway, M.T., Zhu, M.J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S.V., Makarovsky, Oleg, Fromhold, T.M., Patanè, Amalia, Slotman, G.J., Katsnelson, M. I, Geim, A.K., Nososelov, K.S., Eaves, Laurence
Format:	Article
Language:	English
Published:	American Physical Society 2016
Online Access:	http://eprints.nottingham.ac.uk/32831/ http://eprints.nottingham.ac.uk/32831/1/graphene_hBNphonon.pdf

id	nottingham-32831
recordtype	eprints
spelling	nottingham-328312018-07-02T09:05:07Z http://eprints.nottingham.ac.uk/32831/ Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M. I Geim, A.K. Nososelov, K.S. Eaves, Laurence We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states. American Physical Society 2016-03-23 Article PeerReviewed application/pdf en cc_by http://eprints.nottingham.ac.uk/32831/1/graphene_hBNphonon.pdf Vdovin, Evgeny E. and Mishchenko, A. and Greenaway, M.T. and Zhu, M.J. and Ghazaryan, D. and Misra, A. and Cao, Y. and Morozov, S.V. and Makarovsky, Oleg and Fromhold, T.M. and Patanè, Amalia and Slotman, G.J. and Katsnelson, M. I and Geim, A.K. and Nososelov, K.S. and Eaves, Laurence (2016) Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors. Physical Review Letters . ISSN 0031-9007 (In Press)
repository_type	Digital Repository
institution_category	Local University
institution	University of Nottingham Malaysia Campus
building	Nottingham Research Data Repository
collection	Online Access
language	English
description	We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.
format	Article
author	Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M. I Geim, A.K. Nososelov, K.S. Eaves, Laurence
spellingShingle	Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M. I Geim, A.K. Nososelov, K.S. Eaves, Laurence Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
author_facet	Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M. I Geim, A.K. Nososelov, K.S. Eaves, Laurence
author_sort	Vdovin, Evgeny E.
title	Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
title_short	Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
title_full	Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
title_fullStr	Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
title_full_unstemmed	Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
title_sort	phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
publisher	American Physical Society
publishDate	2016
url	http://eprints.nottingham.ac.uk/32831/ http://eprints.nottingham.ac.uk/32831/1/graphene_hBNphonon.pdf
first_indexed	2018-09-06T12:17:42Z
last_indexed	2018-09-06T12:17:42Z
_version_	1610860474938687488

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

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