Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy....
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2016
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| Online Access: | http://eprints.nottingham.ac.uk/34927/ http://eprints.nottingham.ac.uk/34927/ http://eprints.nottingham.ac.uk/34927/ http://eprints.nottingham.ac.uk/34927/1/PhysRevLett.116.186603.pdf |