Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
Main Authors: | , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Springer
2017-08-01
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Series: | Nanoscale Research Letters |
Online Access: | http://link.springer.com/article/10.1186/s11671-017-2227-1 |