Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy
We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atom...
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2014-09-01
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Online Access: | http://dx.doi.org/10.1063/1.4889815 |
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doaj-art-9358bee483204ad19b8b5660819d12582018-09-02T18:02:54ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129092502092502-710.1063/1.4889815002492APMThickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopyP. Sutter0E. Sutter1Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USACenter for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USAWe assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers.http://dx.doi.org/10.1063/1.4889815 |
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P. Sutter E. Sutter Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy APL Materials |
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P. Sutter E. Sutter |
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P. Sutter |
title |
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy |
title_short |
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy |
title_full |
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy |
title_fullStr |
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy |
title_full_unstemmed |
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy |
title_sort |
thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and auger electron spectroscopy |
publisher |
AIP Publishing LLC |
series |
APL Materials |
issn |
2166-532X |
publishDate |
2014-09-01 |
description |
We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers. |
url |
http://dx.doi.org/10.1063/1.4889815 |
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1612632000074612736 |