Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1...

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Main Authors: Shuo-Ting You, Ikai Lo, Jenn-Kai Tsai, Cheng-Hung Shih
Format: Article
Language:English
Published: AIP Publishing LLC 2015-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4937132
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spelling doaj-art-86243c6474394982956343dd6b9924e82018-09-02T05:10:32ZengAIP Publishing LLCAIP Advances2158-32262015-12-01512127201127201-610.1063/1.4937132003512ADVEpitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxyShuo-Ting You0Ikai Lo1Jenn-Kai Tsai2Cheng-Hung Shih3Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Electronic Engineering, National Formosa University, Yunlin 632, TaiwanDepartment of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanWe have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 ) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.http://dx.doi.org/10.1063/1.4937132
institution Open Data Bank
collection Open Access Journals
building Directory of Open Access Journals
language English
format Article
author Shuo-Ting You
Ikai Lo
Jenn-Kai Tsai
Cheng-Hung Shih
spellingShingle Shuo-Ting You
Ikai Lo
Jenn-Kai Tsai
Cheng-Hung Shih
Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy
AIP Advances
author_facet Shuo-Ting You
Ikai Lo
Jenn-Kai Tsai
Cheng-Hung Shih
author_sort Shuo-Ting You
title Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy
title_short Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy
title_full Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy
title_fullStr Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy
title_full_unstemmed Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy
title_sort epitaxial growth of m-plane gan on zno micro-rods by plasma-assisted molecular beam epitaxy
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-12-01
description We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 ) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.
url http://dx.doi.org/10.1063/1.4937132
_version_ 1612656657685282816

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