Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices
Abstract Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2017-08-01
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| Series: | Scientific Reports |
| Online Access: | http://link.springer.com/article/10.1038/s41598-017-09782-1 |