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Influence of the SiNx:H layer...
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Influence of the SiNx:H layer deposited by PECVD technique on the surface and grain boundary passivation of mc-Si
Bibliographic Details
Main Authors:
Stanislawa, Kluska
,
Piotr, Panek
Format:
text
Language:
eng
Published:
Emerald
2016
Subjects:
Thick/thin film technology,Hydrogenated silicon nitride,Multicrystalline silicon (mc-Si),Passivation effect,PECVD
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