Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

by Y. J. Ma, Y. G. Zhang, Y. Gu, S. P. Xi, X. Y. Chen, Baolai Liang, Bor-Chau Juang, Diana L. Huffaker, B. Du, X. M. Shao, J. X. Fang
Published 2017-07-01