Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

by Ying Wang, Xinzhi Sheng, Qinglin Guo, Xiaoli Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Yurii Maidaniuk, Morgan E. Ware, Gregory J. Salamo, Baolai Liang, Diana L. Huffaker
Published 2017-03-01

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

by Y. J. Ma, Y. G. Zhang, Y. Gu, S. P. Xi, X. Y. Chen, Baolai Liang, Bor-Chau Juang, Diana L. Huffaker, B. Du, X. M. Shao, J. X. Fang
Published 2017-07-01