Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device

QR Code

Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device

The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design...

Full description

Bibliographic Details
Main Authors:	Parimon, Norfarariyanti, Mohd. Yusof, Siti Suhaila, Hashim, Abdul Manaf
Format:	Conference or Workshop Item
Language:	English
Published:	2008
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7620/ http://eprints.utm.my/7620/1/Hashim_Abdul_Manaf_2008_Modelling_Characterization_Schottky_Diode_AlGaAs.pdf

Similar Items

Design and characterization of planar antennas on the semi-insulated GaAs for rectenna devices
by: Mustafa, Farahiyah, et al.
Published: (2008)

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
by: Filali, Walid, et al.
Published: (2017)

Observation of first and third harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction
by: Hashima, Abdul Manaf, et al.
Published: (2008)

An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode
by: Maricar, Mohamed Ismaeel, et al.
Published: (2018)

Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers
by: Hashim, Abdul Manaf, et al.
Published: (2007)

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
by: Gordo, V. Orsi, et al.
Published: (2017)

Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier
by: Hashim, Abdul Manaf, et al.
Published: (2007)

Dual-wavelength generation with terahertz spacing using GaAs–AlGaAs microring resonator waveguides
by: Sarrigani, G. V., et al.
Published: (2017)

Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers
by: Tandoi, G., et al.
Published: (2012)

Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser
by: Tandoi, G., et al.
Published: (2011)

Subpicosecond colliding pulse mode locking at 126 GHz in monolithic GaAs/AlGaAs quantum well lasers: Experiments and theory
by: Tandoi, G., et al.
Published: (2013)

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
by: Munir, Tariq
Published: (2011)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes
by: Teffahi, A., et al.
Published: (2016)

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
by: Rodrigues, D.H., et al.
Published: (2016)

Experimental Study Of InGaP/GaAs DHBTS With Composite Collector
by: Poh, Zi-Song
Published: (2009)

X-ray detection with zinc-blende (cubic) GaN Schottky diodes
by: Gohil, T., et al.
Published: (2016)

Distribution of ga vacancies in Zn diffused GaAs
by: Zahari Mohamed Darus,, et al.
Published: (1992)

Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure
by: Maneea Eizadi Sharifabad,, et al.
Published: (2011)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)

Thermal stablity of heavily carbon-doped GaAs
by: Meng , Suan Uang, et al.
Published: (2004)

SPICE simulation assisted-dynamic Rds(on) characterization in 200V commercial Schottky p- GaN HEMTs under unstable phases
by: Liu, Xinzhi, et al.
Published: (2024)

SPICE modelling-Assisted evaluation of dynamic on-resistance characterization in Schottky p-GaN HEMTs amid synchronous buck transient instabilities
by: Liu, Xinzhi, et al.
Published: (2024)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)

Surface reaction of undoped AlGaN/GaN HEMT based two terminal device in H+ and OH- ion-contained aqueous solution
by: Mastura Shafinaz Zainal Abidin,, et al.
Published: (2013)

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)

Performance analysis of parasitic effect on distributed spiral inductor for 0.15 μm GaAs pHEMT MMIC low noise amplifier
by: Norhapizin, Kushairi, et al.
Published: (2012)

The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)

Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2017)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

Self-healing in fractured GaAs nanowires
by: Wang, Jun, et al.
Published: (2012)

Beam steering optical switches in AlGaAs via the Burstein-Moss eﬀect
by: Moss, James L.
Published: (2020)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

High power gaas/algaas mode-locked lasers
by: Tandoi, G., et al.
Published: (2009)

Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes
by: Henini, M.
Published: (2017)