Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2008
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7620/ http://eprints.utm.my/7620/1/Hashim_Abdul_Manaf_2008_Modelling_Characterization_Schottky_Diode_AlGaAs.pdf |