Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design...
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| Format: | Conference or Workshop Item |
| Language: | English |
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2008
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| Online Access: | http://eprints.utm.my/7620/ http://eprints.utm.my/7620/1/Hashim_Abdul_Manaf_2008_Modelling_Characterization_Schottky_Diode_AlGaAs.pdf |
| _version_ | 1848891505641521152 |
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| author | Parimon, Norfarariyanti Mohd. Yusof, Siti Suhaila Hashim, Abdul Manaf |
| author_facet | Parimon, Norfarariyanti Mohd. Yusof, Siti Suhaila Hashim, Abdul Manaf |
| author_sort | Parimon, Norfarariyanti |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length ofcoplanar waveguide. |
| first_indexed | 2025-11-15T20:59:02Z |
| format | Conference or Workshop Item |
| id | utm-7620 |
| institution | Universiti Teknologi Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T20:59:02Z |
| publishDate | 2008 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utm-76202017-10-09T07:35:02Z http://eprints.utm.my/7620/ Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device Parimon, Norfarariyanti Mohd. Yusof, Siti Suhaila Hashim, Abdul Manaf TK Electrical engineering. Electronics Nuclear engineering The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length ofcoplanar waveguide. 2008 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/7620/1/Hashim_Abdul_Manaf_2008_Modelling_Characterization_Schottky_Diode_AlGaAs.pdf Parimon, Norfarariyanti and Mohd. Yusof, Siti Suhaila and Hashim, Abdul Manaf (2008) Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device. In: Proceedings - 2nd Asia International Conference on Modelling and Simulation, AMS 2008, 13-15 May 2008. http://dx.doi.org/10.1109/AMS.2008.187 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Parimon, Norfarariyanti Mohd. Yusof, Siti Suhaila Hashim, Abdul Manaf Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device |
| title | Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device |
| title_full | Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device |
| title_fullStr | Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device |
| title_full_unstemmed | Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device |
| title_short | Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device |
| title_sort | modeling and characterization of schottky diode on algaas/gaas hemt structure for rectenna device |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7620/ http://eprints.utm.my/7620/ http://eprints.utm.my/7620/1/Hashim_Abdul_Manaf_2008_Modelling_Characterization_Schottky_Diode_AlGaAs.pdf |