Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V

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Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V

This paper presents the die design of a NPN transistor, which is targeted for operation in a power amplifier. The proposed die is designed using epitaxial planar bipolar junction technology. The transistor die is designed for operation in the 175MHz frequency range with a 28V biasing. It is capable...

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Bibliographic Details
Main Authors:	Rajah, Prakash, Ismail, Razali, Rajah, Avinash
Other Authors:	Majlis, BY
Format:	Book Section
Language:	English
Published:	IEEE 2004
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/2042/ http://eprints.utm.my/2042/1/RajahIsmailRajah2004__DieDesignOfTransmittingTransistor.pdf

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