Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V
This paper presents the die design of a NPN transistor, which is targeted for operation in a power amplifier. The proposed die is designed using epitaxial planar bipolar junction technology. The transistor die is designed for operation in the 175MHz frequency range with a 28V biasing. It is capable...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Book Section |
| Language: | English |
| Published: |
IEEE
2004
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/2042/ http://eprints.utm.my/2042/1/RajahIsmailRajah2004__DieDesignOfTransmittingTransistor.pdf |