Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications

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Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications

InP based InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs) have shown outstanding performances, which makes them prominent in high frequency mm-wave and submillimeter-wave applications. However, conventional InGaAs/InAlAs pHEMTs have major drawbacks, i.e., very low break...

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Bibliographic Details
Main Author:	Mat Jubadi, Warsuzarina
Format:	Thesis
Language:	English
Published:	2015
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics
Online Access:	http://eprints.uthm.edu.my/1752/ http://eprints.uthm.edu.my/1752/1/24p%20WARSUZARINA%20MAT%20JUBADI.pdf

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