Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

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Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance cha...

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Bibliographic Details
Main Author:	Fauziyah , Salehuddin
Format:	Article
Language:	English
Published:	Academic Journals Inc.. 2011
Subjects:	TA Engineering (General). Civil engineering (General) QC Physics
Online Access:	http://eprints.utem.edu.my/id/eprint/3798/ http://eprints.utem.edu.my/id/eprint/3798/3/%28J7%29_IJPS_6%2830%29_7026-7034.pdf

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