Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board

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Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board

The purpose of this project is to implement and characterize a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low Noise Amplifier (LNA) at 4GHz. The LNA used in this project is Agilent’s MGA-72543 which has an operating frequency from 0.1 GHz to 6.0 GHz. This economical, easy...

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Bibliographic Details
Main Author:	Zainal Mokhtar, Khursiah
Format:	Monograph
Language:	English
Published:	Universiti Sains Malaysia 2006
Subjects:	T Technology TK Electrical Engineering. Electronics. Nuclear Engineering
Online Access:	http://eprints.usm.my/58724/ http://eprints.usm.my/58724/1/Implementation%20And%20Characterization%20Of%20Low%20Noise%20Amplifier%20At%204GHz%20Using%20RF%20Test%20Board_Khursiah%20Zainal%20Mokhtar.pdf

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