Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board

Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board

The purpose of this project is to implement and characterize a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low Noise Amplifier (LNA) at 4GHz. The LNA used in this project is Agilent’s MGA-72543 which has an operating frequency from 0.1 GHz to 6.0 GHz. This economical, easy...

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Bibliographic Details
Main Author: Zainal Mokhtar, Khursiah
Format: Monograph
Language:English
Published: Universiti Sains Malaysia 2006
Subjects:
T Technology
TK Electrical Engineering. Electronics. Nuclear Engineering
Online Access:http://eprints.usm.my/58724/
http://eprints.usm.my/58724/1/Implementation%20And%20Characterization%20Of%20Low%20Noise%20Amplifier%20At%204GHz%20Using%20RF%20Test%20Board_Khursiah%20Zainal%20Mokhtar.pdf

Internet

http://eprints.usm.my/58724/
http://eprints.usm.my/58724/1/Implementation%20And%20Characterization%20Of%20Low%20Noise%20Amplifier%20At%204GHz%20Using%20RF%20Test%20Board_Khursiah%20Zainal%20Mokhtar.pdf

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