Analog Structural Modeling Of Resonant Tunneling Diode Using Ltspice

Analog Structural Modeling Of Resonant Tunneling Diode Using Ltspice

In this research, the material InGaAs/AlAs and GaAs/AlAs are used as the material for the double barriers resonant tunneling diode (RTD). RTD is the fastest electronic device to date. RTD consists of a quantum well sandwiched in between two thin barriers InGaAs/AlAs and GaAs/AlAs. Both ends are term...

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Bibliographic Details
Main Author: Zaharimying, Wan Nurnabilah
Format: Monograph
Language:English
Published: Universiti Sains Malaysia 2017
Subjects:
T Technology
TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Online Access:http://eprints.usm.my/52879/
http://eprints.usm.my/52879/1/Analog%20Structural%20Modeling%20Of%20Resonant%20Tunneling%20Diode%20Using%20Ltspice_Wan%20Nurnabilah%20Zaharimying_E3_2017.pdf

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http://eprints.usm.my/52879/
http://eprints.usm.my/52879/1/Analog%20Structural%20Modeling%20Of%20Resonant%20Tunneling%20Diode%20Using%20Ltspice_Wan%20Nurnabilah%20Zaharimying_E3_2017.pdf

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