Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LEDs. Nonetheless, the overall efficiency of the GaN-on-GaN LEDs is still lower than the GaN-on-sapphire LEDs. The problem is associated to total internal reflection effect which is higher in the LEDs....
| Main Authors: | , , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/49096/ http://eprints.usm.my/49096/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2076.pdf |