Inhomogeneity Of An InGaN Based Blue LED Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe
Tomography (APT)

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Inhomogeneity Of An InGaN Based Blue LED Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)

InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well whic...

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Bibliographic Details
Main Authors:	Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Zainal, Norzaini, Ng, Sha Shiong, Hassan, Zainuriah
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/49054/ http://eprints.usm.my/49054/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2051.pdf

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