Inhomogeneity Of An InGaN Based Blue LED Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)

Inhomogeneity Of An InGaN Based Blue LED Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)

InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well whic...

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Bibliographic Details
Main Authors: Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Zainal, Norzaini, Ng, Sha Shiong, Hassan, Zainuriah
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/49054/
http://eprints.usm.my/49054/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2051.pdf

Internet

http://eprints.usm.my/49054/
http://eprints.usm.my/49054/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2051.pdf

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