Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes

Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes

- In this work, indium gallium nitride (InGaN) based near ultraviolet light emitting diode (NUV-LED) has been grown on a 2-inch c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition (MOCVD). The attention was paid to the effects of the V/III rati...

Full description

Bibliographic Details
Main Authors: Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Ng, Sha Shiong, Way, Foong Lim, Khai, Sheen Lau, Alias, Ezzah A., Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/49038/
http://eprints.usm.my/49038/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut.pdf

Internet

http://eprints.usm.my/49038/
http://eprints.usm.my/49038/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut.pdf

Similar Items