Influence of sulfurization temperature on the growth of MoS2 thin films
In this work, molybdenum disulfide (MoS2) thin film was successfully deposited by using thermal vapour sulfurization method with spin coating as pre-deposition technique. The availability of solvent for dissolution process of molybdenum (Mo) and sulfur (S) sources is rare. Single source precursor (S...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Online Access: | http://eprints.usm.my/48998/ http://eprints.usm.my/48998/1/NSS_01.pdf%20cut.pdf |
| _version_ | 1848881315794911232 |
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| author | Tan, A. L. Ng, Sha Shiong Hassan, H. Abu |
| author_facet | Tan, A. L. Ng, Sha Shiong Hassan, H. Abu |
| author_sort | Tan, A. L. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this work, molybdenum disulfide (MoS2) thin film was successfully deposited by using thermal vapour sulfurization method with spin coating as pre-deposition technique. The availability of solvent for dissolution process of molybdenum (Mo) and sulfur (S) sources is rare. Single source precursor (SSP) was the common starting source for the preparation of precursor solution. However, hazardous solvent was required to dissolve the SSP. An alternative, dual source precursor (DSP) approach, was applied in this study. Thereafter, sulfurization process was imposed as to transform the deposited MoS-based films to MoS2 thin films. Carbon disulfide was used as the sulfurization source due to the lower decomposition rate as compared to conventional S powder. The homogeneity and compactness of MoS2 were improved when sulfurization temperature increases. Yet, rod-like feature was observed at much higher temperature. Next, the absorption features of MoS2 were detected at 667 nm, 617 nm and 447 nm. Resonant Raman spectroscopy showed the multiphonon and second order vibrational modes of MoS2. Also, multilayers of MoS2 was estimated by frequency difference of E1 2g(Γ) and A1g(Γ) modes. This observation was further confirm by the high resolution transmission electron microscopy. |
| first_indexed | 2025-11-15T18:17:04Z |
| format | Conference or Workshop Item |
| id | usm-48998 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:17:04Z |
| publishDate | 2018 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-489982021-04-22T07:17:14Z http://eprints.usm.my/48998/ Influence of sulfurization temperature on the growth of MoS2 thin films Tan, A. L. Ng, Sha Shiong Hassan, H. Abu QC1-999 Physics In this work, molybdenum disulfide (MoS2) thin film was successfully deposited by using thermal vapour sulfurization method with spin coating as pre-deposition technique. The availability of solvent for dissolution process of molybdenum (Mo) and sulfur (S) sources is rare. Single source precursor (SSP) was the common starting source for the preparation of precursor solution. However, hazardous solvent was required to dissolve the SSP. An alternative, dual source precursor (DSP) approach, was applied in this study. Thereafter, sulfurization process was imposed as to transform the deposited MoS-based films to MoS2 thin films. Carbon disulfide was used as the sulfurization source due to the lower decomposition rate as compared to conventional S powder. The homogeneity and compactness of MoS2 were improved when sulfurization temperature increases. Yet, rod-like feature was observed at much higher temperature. Next, the absorption features of MoS2 were detected at 667 nm, 617 nm and 447 nm. Resonant Raman spectroscopy showed the multiphonon and second order vibrational modes of MoS2. Also, multilayers of MoS2 was estimated by frequency difference of E1 2g(Γ) and A1g(Γ) modes. This observation was further confirm by the high resolution transmission electron microscopy. 2018-11-29 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48998/1/NSS_01.pdf%20cut.pdf Tan, A. L. and Ng, Sha Shiong and Hassan, H. Abu (2018) Influence of sulfurization temperature on the growth of MoS2 thin films. In: 6th International Conference on Recent Advances in Materials, Minerals and Environment 2018 (RAMM 2018). |
| spellingShingle | QC1-999 Physics Tan, A. L. Ng, Sha Shiong Hassan, H. Abu Influence of sulfurization temperature on the growth of MoS2 thin films |
| title | Influence of sulfurization temperature on the growth of MoS2 thin films |
| title_full | Influence of sulfurization temperature on the growth of MoS2 thin films |
| title_fullStr | Influence of sulfurization temperature on the growth of MoS2 thin films |
| title_full_unstemmed | Influence of sulfurization temperature on the growth of MoS2 thin films |
| title_short | Influence of sulfurization temperature on the growth of MoS2 thin films |
| title_sort | influence of sulfurization temperature on the growth of mos2 thin films |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48998/ http://eprints.usm.my/48998/1/NSS_01.pdf%20cut.pdf |