Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure

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Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure

In the present work, InGaN quantum well (QW) and undoped GaN layer were grown on a flat sapphire substrate (FSS) with different growth temperatures using Metal Organic Chemical Vapor Phase Deposition (MOCVD) to investigate the effects of growth temperature towards indium (In) composition and perform...

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Bibliographic Details
Main Authors:	Seliman, Muhd Azi Che, Hassan, Zainuriah, Yusof, Ahmad Sauffi, Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Baharin, Mohd Syamsul Nasyriq Samsol
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48967/ http://eprints.usm.my/48967/1/MNRG_ZH07.pdf

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