Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure

Effects Of Different Growth Temperatures Towards Indium Composition And Performance Of Ingan Quantum Well Heterostructure

In the present work, InGaN quantum well (QW) and undoped GaN layer were grown on a flat sapphire substrate (FSS) with different growth temperatures using Metal Organic Chemical Vapor Phase Deposition (MOCVD) to investigate the effects of growth temperature towards indium (In) composition and perform...

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Bibliographic Details
Main Authors: Seliman, Muhd Azi Che, Hassan, Zainuriah, Yusof, Ahmad Sauffi, Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Baharin, Mohd Syamsul Nasyriq Samsol
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/48967/
http://eprints.usm.my/48967/1/MNRG_ZH07.pdf

Internet

http://eprints.usm.my/48967/
http://eprints.usm.my/48967/1/MNRG_ZH07.pdf

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