Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique

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Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique

Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating current photo-assisted electrochemical (ACPEC) etching in 1:4 volume ratio of hydrofluoric acid (HF) and ethanol (C2H5OH) for a duration of 30 minutes. The aim of this work is to study pore formation on the Si an...

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Bibliographic Details
Main Authors:	Sohimee, S. N., Hassan, Z., Ahmed, Naser M., Radzali, R., Quah, H. J., Lim, W. F.
Format:	Conference or Workshop Item
Language:	English
Published:	2019
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48904/ http://eprints.usm.my/48904/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2098.pdf

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