Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures
Indium nitride (InN) thin films were deposited on kapton polyimide substrate by using reactive gas-timing radio frequency (RF) sputtering technique. An indium target with purity of 99.999% was used. Throughout this work, the RF power and gas ratio of argon and nitrogen were maintained at 60 W and 40...
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| Format: | Conference or Workshop Item |
| Language: | English |
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2019
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| Online Access: | http://eprints.usm.my/48847/ http://eprints.usm.my/48847/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20117.pdf |
| _version_ | 1848881272658591744 |
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| author | Osman, S. A. Ng, S. S. Hassan, Z. |
| author_facet | Osman, S. A. Ng, S. S. Hassan, Z. |
| author_sort | Osman, S. A. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Indium nitride (InN) thin films were deposited on kapton polyimide substrate by using reactive gas-timing radio frequency (RF) sputtering technique. An indium target with purity of 99.999% was used. Throughout this work, the RF power and gas ratio of argon and nitrogen were maintained at 60 W and 40:60 (Ar:N2), respectively. The substrate temperature was varied from room temperature to 300C. The surface morphology, structural and electrical properties of the deposited thin films as a function of the substrate temperature were investigated. All the deposited InN thin films have wurtzite crystal structure with preferred orientation along the (101) direction. The InN (101) peak becomes stronger and sharper as the substrate temperature increases from 100C to 300C. In addition, the packing density of the grains increases as the substrate temperature increases. The deposited InN films exhibit n-type conductivity behaviour and its Hall mobility increases from 720 cm2/V-s to 2670 cm2/V-s as the substrate temperature increases from room temperature to 300C. These results imply that nucleation and crystal growth as well as the crystalline quality were improved at higher substrate temperatures. All the results lead to conclude that the optimal substrate temperature for the deposition of InN was 300C. |
| first_indexed | 2025-11-15T18:16:23Z |
| format | Conference or Workshop Item |
| id | usm-48847 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:23Z |
| publishDate | 2019 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488472021-04-12T09:20:59Z http://eprints.usm.my/48847/ Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures Osman, S. A. Ng, S. S. Hassan, Z. QC1-999 Physics Indium nitride (InN) thin films were deposited on kapton polyimide substrate by using reactive gas-timing radio frequency (RF) sputtering technique. An indium target with purity of 99.999% was used. Throughout this work, the RF power and gas ratio of argon and nitrogen were maintained at 60 W and 40:60 (Ar:N2), respectively. The substrate temperature was varied from room temperature to 300C. The surface morphology, structural and electrical properties of the deposited thin films as a function of the substrate temperature were investigated. All the deposited InN thin films have wurtzite crystal structure with preferred orientation along the (101) direction. The InN (101) peak becomes stronger and sharper as the substrate temperature increases from 100C to 300C. In addition, the packing density of the grains increases as the substrate temperature increases. The deposited InN films exhibit n-type conductivity behaviour and its Hall mobility increases from 720 cm2/V-s to 2670 cm2/V-s as the substrate temperature increases from room temperature to 300C. These results imply that nucleation and crystal growth as well as the crystalline quality were improved at higher substrate temperatures. All the results lead to conclude that the optimal substrate temperature for the deposition of InN was 300C. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48847/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20117.pdf Osman, S. A. and Ng, S. S. and Hassan, Z. (2019) Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Osman, S. A. Ng, S. S. Hassan, Z. Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures |
| title | Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures |
| title_full | Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures |
| title_fullStr | Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures |
| title_full_unstemmed | Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures |
| title_short | Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures |
| title_sort | reactive sputtering growth of indium nitride thin films on flexible substrate under different substrate temperatures |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48847/ http://eprints.usm.my/48847/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20117.pdf |