Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering

This paper presents the study and characterization of indium nitride (InN) films grown on quartz glass and p-Si (111) substrates by RF magnetron sputtering method using pure indium target in argon (Ar) and nitrogen (N 2) environment. The characterization was carried out by high resolution X-ray di...

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Main Authors: Bashir, Umar, Hassan, Zainuriah, Ahmed, Naser M.
Format: Conference or Workshop Item
Language:English
Published: 2016
Subjects:
Online Access:http://eprints.usm.my/48795/
http://eprints.usm.my/48795/1/ZO3.pdf%20done.pdf
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author Bashir, Umar
Hassan, Zainuriah
Ahmed, Naser M.
author_facet Bashir, Umar
Hassan, Zainuriah
Ahmed, Naser M.
author_sort Bashir, Umar
building USM Institutional Repository
collection Online Access
description This paper presents the study and characterization of indium nitride (InN) films grown on quartz glass and p-Si (111) substrates by RF magnetron sputtering method using pure indium target in argon (Ar) and nitrogen (N 2) environment. The characterization was carried out by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX). XRD results show the growth of polycrystalline wurtzite films with varying peak intensities. The deposited films were annealed in nitrogen environment at different temperatures ranging from 1 00°C to 400°C. The annealing was carried out for four hours and the results were compared with pre-annealing samples.
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format Conference or Workshop Item
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institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T18:16:08Z
publishDate 2016
recordtype eprints
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spelling usm-487952021-04-07T07:18:27Z http://eprints.usm.my/48795/ Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering Bashir, Umar Hassan, Zainuriah Ahmed, Naser M. QC1-999 Physics This paper presents the study and characterization of indium nitride (InN) films grown on quartz glass and p-Si (111) substrates by RF magnetron sputtering method using pure indium target in argon (Ar) and nitrogen (N 2) environment. The characterization was carried out by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX). XRD results show the growth of polycrystalline wurtzite films with varying peak intensities. The deposited films were annealed in nitrogen environment at different temperatures ranging from 1 00°C to 400°C. The annealing was carried out for four hours and the results were compared with pre-annealing samples. 2016-12-07 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48795/1/ZO3.pdf%20done.pdf Bashir, Umar and Hassan, Zainuriah and Ahmed, Naser M. (2016) Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016).
spellingShingle QC1-999 Physics
Bashir, Umar
Hassan, Zainuriah
Ahmed, Naser M.
Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering
title Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering
title_full Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering
title_fullStr Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering
title_full_unstemmed Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering
title_short Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering
title_sort influence of annealing temperature on inn thin films grown by rf magnetron sputtering
topic QC1-999 Physics
url http://eprints.usm.my/48795/
http://eprints.usm.my/48795/1/ZO3.pdf%20done.pdf