Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN

QR Code

Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN

We report on the improved structural. electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600 oc in N2 amb...

Full description

Bibliographic Details
Main Authors:	Ali, Ahmad Hadi, Shuhaimi, Ahmad, Hassan, Zainuriah
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/48406/ http://eprints.usm.my/48406/1/Section%20C%20148.pdf%20cut.pdf

Similar Items

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)

Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.
by: C, W Chin, et al.
Published: (2007)

Innovative Developments in GaN-based Technology
by: Hassan, Zainuriah
Published: (2016)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Transparent electrodes for optoelectronic displays
by: Al-Khateeb, Khalid A. Saeed
Published: (2011)

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
by: Fay, Mike W., et al.
Published: (2008)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Transparent Conductive Electrodes For Gan-Based Light Emitting Device
by: Ali, Ahmad Hadi
Published: (2016)

Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
by: Rais, Shamsul Amir Abdul, et al.

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)

The influence of temperature on the electrical conductivity of GaN piezoelectric semiconductors
by: Qiao, Y., et al.
Published: (2023)

Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
by: Ibrahim, N., et al.
Published: (2019)

Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001)

Effect Of Varying Thermal Annealing Temperature On The Characteristics Of Lower And Higher Mg-DOPED GaN
by: Hanafiah, A. M., et al.
Published: (2019)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
by: Yusnizam, Yusuf
Published: (2017)

Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
by: Myers, M, et al.
Published: (2013)

Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012)

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)

Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
by: Ahmad, M. A., et al.
Published: (2019)

Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
by: Czerniuk, T., et al.
Published: (2017)

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
by: Samsudin, M. E. A., et al.
Published: (2019)

Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator
by: Taib, M. lkram Md, et al.
Published: (2015)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
by: Hamzah, Nur Atiqah, et al.
Published: (2020)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
by: Hamzah, Nur Atiqah, et al.
Published: (2020)

Anharmonic phonon decay in cubic GaN
by: Cuscó, R., et al.
Published: (2015)

EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)

AlGaN/GaN-based biosensor for label-free detection of biological activity
by: Podolska, Anna, et al.
Published: (2013)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M, et al.
Published: (2020)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013)

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
by: Munir, Tariq
Published: (2011)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M., et al.
Published: (2020)

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)

Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
by: Podolska, Anna, et al.
Published: (2010)

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
by: Moldovan, Grigore, et al.
Published: (2004)

Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method
by: Mohammad, Sabah M., et al.
Published: (2015)