Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN
We report on the improved structural. electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600 oc in N2 amb...
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/48406/ http://eprints.usm.my/48406/1/Section%20C%20148.pdf%20cut.pdf |