Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.

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Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.

Projek ini bermula dengan pembikinan struktur GaAs (100) berliang menggunakan larutan punaran H2S04: DMF dengan nisbah optimum 1 :3. Liang yang berbentuk bulat dengan keseragaman tinggi telah diperolehi berbanding dengan larutan punaran lain. Sam pel GaAs berliang tersebut sepatutnya digunakan untuk...

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Bibliographic Details
Main Author:	Zainal, Norzaini
Format:	Monograph
Published:	Universiti Sains Malaysia 2016
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/32554/

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