Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
Projek ini bermula dengan pembikinan struktur GaAs (100) berliang menggunakan larutan punaran H2S04: DMF dengan nisbah optimum 1 :3. Liang yang berbentuk bulat dengan keseragaman tinggi telah diperolehi berbanding dengan larutan punaran lain. Sam pel GaAs berliang tersebut sepatutnya digunakan untuk...
| Main Author: | |
|---|---|
| Format: | Monograph |
| Published: |
Universiti Sains Malaysia
2016
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/32554/ |
| _version_ | 1848876842290774016 |
|---|---|
| author | Zainal, Norzaini |
| author_facet | Zainal, Norzaini |
| author_sort | Zainal, Norzaini |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Projek ini bermula dengan pembikinan struktur GaAs (100) berliang menggunakan larutan punaran H2S04: DMF dengan nisbah optimum 1 :3. Liang yang berbentuk bulat dengan keseragaman tinggi telah diperolehi berbanding dengan larutan punaran lain. Sam pel GaAs berliang tersebut sepatutnya digunakan untuk penumbahan GaN di atasnya menggunakan teknik MOCVD.
This project was started with fabrication of porous GaAs (100) structure on GaAs (100) substrate using
etching solution of H2S04: DMF with the optimum ratio of 1 :3. A well-defined circular shaped of porous GaAs
was obtained with high uniformity, in comparison to other etching solutions. The porous GaAs sample was
then used for growing GaN atop it using MOCVD technique.
|
| first_indexed | 2025-11-15T17:05:58Z |
| format | Monograph |
| id | usm-32554 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-15T17:05:58Z |
| publishDate | 2016 |
| publisher | Universiti Sains Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-325542020-03-12T07:17:48Z http://eprints.usm.my/32554/ Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. Zainal, Norzaini QC1-999 Physics Projek ini bermula dengan pembikinan struktur GaAs (100) berliang menggunakan larutan punaran H2S04: DMF dengan nisbah optimum 1 :3. Liang yang berbentuk bulat dengan keseragaman tinggi telah diperolehi berbanding dengan larutan punaran lain. Sam pel GaAs berliang tersebut sepatutnya digunakan untuk penumbahan GaN di atasnya menggunakan teknik MOCVD. This project was started with fabrication of porous GaAs (100) structure on GaAs (100) substrate using etching solution of H2S04: DMF with the optimum ratio of 1 :3. A well-defined circular shaped of porous GaAs was obtained with high uniformity, in comparison to other etching solutions. The porous GaAs sample was then used for growing GaN atop it using MOCVD technique. Universiti Sains Malaysia 2016 Monograph NonPeerReviewed Zainal, Norzaini (2016) Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. Project Report. Universiti Sains Malaysia. (Submitted) |
| spellingShingle | QC1-999 Physics Zainal, Norzaini Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. |
| title | Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. |
| title_full | Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. |
| title_fullStr | Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. |
| title_full_unstemmed | Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. |
| title_short | Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. |
| title_sort | study of cubic gan on porous gaas substrate for high efficient energy devices. |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/32554/ |