Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source
This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 c...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
AIP Publishing LLC
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/57389/ http://psasir.upm.edu.my/id/eprint/57389/1/Effect%20of%20argon%20gas%20flow%20rate%20on%20properties%20of%20film%20electrodes%20prepared%20by%20thermal%20vacuum%20evaporation%20from%20synthesized%20Cu2SnSe3%20source.pdf |
| _version_ | 1848853352666890240 |
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| author | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi |
| author_facet | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi |
| author_sort | Sabli, Nordin |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse. |
| first_indexed | 2025-11-15T10:52:37Z |
| format | Conference or Workshop Item |
| id | upm-57389 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T10:52:37Z |
| publishDate | 2013 |
| publisher | AIP Publishing LLC |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-573892017-09-27T07:28:50Z http://psasir.upm.edu.my/id/eprint/57389/ Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse. AIP Publishing LLC 2013 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/57389/1/Effect%20of%20argon%20gas%20flow%20rate%20on%20properties%20of%20film%20electrodes%20prepared%20by%20thermal%20vacuum%20evaporation%20from%20synthesized%20Cu2SnSe3%20source.pdf Sabli, Nordin and Talib, Zainal Abidin and Mat Yunus, Wan Mahmood and Zainal, Zulkarnain and Hilal, Hikmat S. and Fujii, Masatoshi (2013) Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source. In: 4th International Meeting on Frontiers in Physics (IMFP 2013), 27-30 Aug. 2013, Kuala Lumpur, Malaysia. (pp. 261-264). 10.1063/1.4866957 |
| spellingShingle | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source |
| title | Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source |
| title_full | Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source |
| title_fullStr | Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source |
| title_full_unstemmed | Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source |
| title_short | Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source |
| title_sort | effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized cu2snse3 source |
| url | http://psasir.upm.edu.my/id/eprint/57389/ http://psasir.upm.edu.my/id/eprint/57389/ http://psasir.upm.edu.my/id/eprint/57389/1/Effect%20of%20argon%20gas%20flow%20rate%20on%20properties%20of%20film%20electrodes%20prepared%20by%20thermal%20vacuum%20evaporation%20from%20synthesized%20Cu2SnSe3%20source.pdf |