Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source

Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source

This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 c...

Full description

Bibliographic Details
Main Authors: Sabli, Nordin, Talib, Zainal Abidin, Mat Yunus, Wan Mahmood, Zainal, Zulkarnain, Hilal, Hikmat S., Fujii, Masatoshi
Format: Conference or Workshop Item
Language:English
Published: AIP Publishing LLC 2013
Online Access:http://psasir.upm.edu.my/id/eprint/57389/
http://psasir.upm.edu.my/id/eprint/57389/1/Effect%20of%20argon%20gas%20flow%20rate%20on%20properties%20of%20film%20electrodes%20prepared%20by%20thermal%20vacuum%20evaporation%20from%20synthesized%20Cu2SnSe3%20source.pdf

Internet

http://psasir.upm.edu.my/id/eprint/57389/
http://psasir.upm.edu.my/id/eprint/57389/1/Effect%20of%20argon%20gas%20flow%20rate%20on%20properties%20of%20film%20electrodes%20prepared%20by%20thermal%20vacuum%20evaporation%20from%20synthesized%20Cu2SnSe3%20source.pdf

Similar Items