Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator...

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Bibliographic Details
Main Authors: Dehzangi, Arash, Larki, Farhad, Naseri, Mahmud Godarz, Navasery, Manizheh, Yeop Majlis, Burhanuddin, Mohd Razip Wee, Mohd Farhanulhakim, Mohamed Kamari, Halimah, Islam, Md. Shabiul, Md. Ali, Sawal Hamid, Saion, Elias
Format: Article
Language:English
Published: Elsevier 2015
Online Access:http://psasir.upm.edu.my/id/eprint/37600/
http://psasir.upm.edu.my/id/eprint/37600/1/Fabrication%20and%20simulation%20of%20single%20crystal%20p-type%20Si%20nanowire%20using%20SOI%20technology.pdf

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http://psasir.upm.edu.my/id/eprint/37600/
http://psasir.upm.edu.my/id/eprint/37600/1/Fabrication%20and%20simulation%20of%20single%20crystal%20p-type%20Si%20nanowire%20using%20SOI%20technology.pdf

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