Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength

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Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength

This study proves the addition of quantum wells to the intrinsic regions of p-i-n GaInNAs/GaAs has improved the performance of optoelectronic devices. The optoelectronic properties that contribute to the device's dark current and photocurrent need to be well understood to develop photo-response...

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Bibliographic Details
Main Authors:	Megat Hasnan, M. M. I., Nordin, M. S., Nayan, N., Mohamad, K. A., Basri, N. F., Alias, A., Vicker, A. J., Noor, I. M.
Format:	Article
Published:	Elsevier 2022
Online Access:	http://psasir.upm.edu.my/id/eprint/102422/

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