Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength
This study proves the addition of quantum wells to the intrinsic regions of p-i-n GaInNAs/GaAs has improved the performance of optoelectronic devices. The optoelectronic properties that contribute to the device's dark current and photocurrent need to be well understood to develop photo-response...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2022
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| Online Access: | http://psasir.upm.edu.my/id/eprint/102422/ |