Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Purpose – The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. I...

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Bibliographic Details
Main Authors: Siti Kudnie, Sahari, Muhammad, Kashif, Norsuzailina, Mohamed Sutan, Zaidi, Embong, Nik Amni Fathi, Nik Zaini Fathi, Azrul Azlan, Hamzah, Rohana, Sapawi, Burhanuddin, Yeop Majlis, Ibrahim, Ahmad
Format: Article
Language:English
Published: Emerald Publishing Limited 2017
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://ir.unimas.my/id/eprint/16683/
http://ir.unimas.my/id/eprint/16683/1/Sahari.pdf

Internet

http://ir.unimas.my/id/eprint/16683/
http://ir.unimas.my/id/eprint/16683/1/Sahari.pdf

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