Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric
This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Mic...
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers Inc.
2015
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| Online Access: | http://ir.unimas.my/id/eprint/15193/ http://ir.unimas.my/id/eprint/15193/1/Wet-chemical-cleaning-effect-on-the-formation-of-ultrathin-interfacial-layer-between-Germanium-%28Ge%29-and-high-k-dielectric_2015_RSM-2015---2015-IEEE-Regional-Symposium-on-Micro-and-Nano-Electronics%2C-Proceedin.html |
| _version_ | 1848837802253352960 |
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| author | Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Norsuzailina, Mohammad Sutan Rohana, Sapawi |
| author_facet | Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Norsuzailina, Mohammad Sutan Rohana, Sapawi |
| author_sort | Siti Kudnie, Sahari |
| building | UNIMAS Institutional Repository |
| collection | Online Access |
| description | This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Microscope (FESEM) was carried out to determine the thickness of interfacial layer between Al2O3 and Ge (100) surface. Results of this study showed that an HF treatment gives a rougher surface of Al2O3 than HCl treatment. Both wet chemical cleaning resulted with step and terrace trend of Al2O3 and interfacial layer. This may be due to initial Ge surface just after HF cleaning is rougher than the initial Ge surface after HCl cleaning. |
| first_indexed | 2025-11-15T06:45:27Z |
| format | Article |
| id | unimas-15193 |
| institution | Universiti Malaysia Sarawak |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T06:45:27Z |
| publishDate | 2015 |
| publisher | Institute of Electrical and Electronics Engineers Inc. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | unimas-151932017-02-06T01:39:22Z http://ir.unimas.my/id/eprint/15193/ Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Norsuzailina, Mohammad Sutan Rohana, Sapawi TC Hydraulic engineering. Ocean engineering TP Chemical technology This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Microscope (FESEM) was carried out to determine the thickness of interfacial layer between Al2O3 and Ge (100) surface. Results of this study showed that an HF treatment gives a rougher surface of Al2O3 than HCl treatment. Both wet chemical cleaning resulted with step and terrace trend of Al2O3 and interfacial layer. This may be due to initial Ge surface just after HF cleaning is rougher than the initial Ge surface after HCl cleaning. Institute of Electrical and Electronics Engineers Inc. 2015-12-11 Article PeerReviewed text en http://ir.unimas.my/id/eprint/15193/1/Wet-chemical-cleaning-effect-on-the-formation-of-ultrathin-interfacial-layer-between-Germanium-%28Ge%29-and-high-k-dielectric_2015_RSM-2015---2015-IEEE-Regional-Symposium-on-Micro-and-Nano-Electronics%2C-Proceedin.html Siti Kudnie, Sahari and Nik Amni Fathi, Nik Zaini Fathi and Norsuzailina, Mohammad Sutan and Rohana, Sapawi (2015) Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric. RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. ISSN ISBN: 978-147998550-0 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963860989&doi=10.1109%2fRSM.2015.7355015&partnerID=40&md5=2e41feec1ba73298f81daab61b1e5d2c DOI: 10.1109/RSM.2015.7355015 |
| spellingShingle | TC Hydraulic engineering. Ocean engineering TP Chemical technology Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Norsuzailina, Mohammad Sutan Rohana, Sapawi Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric |
| title | Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric |
| title_full | Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric |
| title_fullStr | Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric |
| title_full_unstemmed | Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric |
| title_short | Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric |
| title_sort | wet chemical cleaning effect on the formation of ultrathin interfacial layer between germanium (ge) and high-k dielectric |
| topic | TC Hydraulic engineering. Ocean engineering TP Chemical technology |
| url | http://ir.unimas.my/id/eprint/15193/ http://ir.unimas.my/id/eprint/15193/ http://ir.unimas.my/id/eprint/15193/ http://ir.unimas.my/id/eprint/15193/1/Wet-chemical-cleaning-effect-on-the-formation-of-ultrathin-interfacial-layer-between-Germanium-%28Ge%29-and-high-k-dielectric_2015_RSM-2015---2015-IEEE-Regional-Symposium-on-Micro-and-Nano-Electronics%2C-Proceedin.html |