Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric

Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric

This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Mic...

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Bibliographic Details
Main Authors: Siti Kudnie, Sahari, Nik Amni Fathi, Nik Zaini Fathi, Norsuzailina, Mohammad Sutan, Rohana, Sapawi
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2015
Subjects:
TC Hydraulic engineering. Ocean engineering
TP Chemical technology
Online Access:http://ir.unimas.my/id/eprint/15193/
http://ir.unimas.my/id/eprint/15193/1/Wet-chemical-cleaning-effect-on-the-formation-of-ultrathin-interfacial-layer-between-Germanium-%28Ge%29-and-high-k-dielectric_2015_RSM-2015---2015-IEEE-Regional-Symposium-on-Micro-and-Nano-Electronics%2C-Proceedin.html

Internet

http://ir.unimas.my/id/eprint/15193/
http://ir.unimas.my/id/eprint/15193/1/Wet-chemical-cleaning-effect-on-the-formation-of-ultrathin-interfacial-layer-between-Germanium-%28Ge%29-and-high-k-dielectric_2015_RSM-2015---2015-IEEE-Regional-Symposium-on-Micro-and-Nano-Electronics%2C-Proceedin.html

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