Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

This study aims to design an optimal nano-dimensional channel of fin field effect transistor (FinFET) on the basis of electrical characteristics and constituent semiconductor materials (Si, GaAs, Ge, and InAs) to overcome issues regarding the shrinking of dimensions and ensure the best performance o...

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Bibliographic Details
Main Authors: Waheb, A.Jabbara, Ahmed, Mahmood, Sultan, Jamil
Format: Article
Language:English
Published: Universitas Ahmad Dahlan 2022
Subjects:
T Technology (General)
TA Engineering (General). Civil engineering (General)
TC Hydraulic engineering. Ocean engineering
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/33376/
http://umpir.ump.edu.my/id/eprint/33376/1/Modeling%20and%20characterization%20of%20optimal%20nano-scale%20channel%20dimensions.pdf

Internet

http://umpir.ump.edu.my/id/eprint/33376/
http://umpir.ump.edu.my/id/eprint/33376/1/Modeling%20and%20characterization%20of%20optimal%20nano-scale%20channel%20dimensions.pdf

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