Temperature characteristics of Gate all around nanowire channel Si-TFET
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing...
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IOP Publishing
2021
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/32198/ http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf |
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| author | Agha, Firas Natheer Abdul-kadir Hashim, Yasir Jabbar, Waheb A. |
| author_facet | Agha, Firas Natheer Abdul-kadir Hashim, Yasir Jabbar, Waheb A. |
| author_sort | Agha, Firas Natheer Abdul-kadir |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150°C. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions. |
| first_indexed | 2025-11-15T03:05:26Z |
| format | Conference or Workshop Item |
| id | ump-32198 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T03:05:26Z |
| publishDate | 2021 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-321982022-02-10T02:12:27Z http://umpir.ump.edu.my/id/eprint/32198/ Temperature characteristics of Gate all around nanowire channel Si-TFET Agha, Firas Natheer Abdul-kadir Hashim, Yasir Jabbar, Waheb A. TK Electrical engineering. Electronics Nuclear engineering This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150°C. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions. IOP Publishing 2021-03-01 Conference or Workshop Item PeerReviewed pdf en cc_by http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf Agha, Firas Natheer Abdul-kadir and Hashim, Yasir and Jabbar, Waheb A. (2021) Temperature characteristics of Gate all around nanowire channel Si-TFET. In: Journal of Physics: Conference Series; 5th International Conference on Electronic Design, ICED 2020 , 19 August 2020 , Perlis, Virtual. pp. 1-8., 1755 (1). ISBN 1742-6588 (Published) https://doi.org/10.1088/1742-6596/1755/1/012045 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Agha, Firas Natheer Abdul-kadir Hashim, Yasir Jabbar, Waheb A. Temperature characteristics of Gate all around nanowire channel Si-TFET |
| title | Temperature characteristics of Gate all around nanowire channel Si-TFET |
| title_full | Temperature characteristics of Gate all around nanowire channel Si-TFET |
| title_fullStr | Temperature characteristics of Gate all around nanowire channel Si-TFET |
| title_full_unstemmed | Temperature characteristics of Gate all around nanowire channel Si-TFET |
| title_short | Temperature characteristics of Gate all around nanowire channel Si-TFET |
| title_sort | temperature characteristics of gate all around nanowire channel si-tfet |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/32198/ http://umpir.ump.edu.my/id/eprint/32198/ http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf |