Temperature characteristics of Gate all around nanowire channel Si-TFET

Temperature characteristics of Gate all around nanowire channel Si-TFET

This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing...

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Bibliographic Details
Main Authors: Agha, Firas Natheer Abdul-kadir, Hashim, Yasir, Jabbar, Waheb A.
Format: Conference or Workshop Item
Language:English
Published: IOP Publishing 2021
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/32198/
http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf

Internet

http://umpir.ump.edu.my/id/eprint/32198/
http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf

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