Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

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Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of t...

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Bibliographic Details
Main Authors:	Abdul-Kadir, Firas Natheer, Hashim, Yasir, Shakib, Mohammed Nazmus, Taha, Faris Hassan
Format:	Article
Language:	English
Published:	Institute of Advanced Engineering and Science (IAES) 2021
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/30151/ http://umpir.ump.edu.my/id/eprint/30151/1/GAA%20TFET.pdf

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