Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of t...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science (IAES)
2021
|
| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/30151/ http://umpir.ump.edu.my/id/eprint/30151/1/GAA%20TFET.pdf |