Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of t...
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| Format: | Article |
| Language: | English |
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Institute of Advanced Engineering and Science (IAES)
2021
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| Online Access: | https://umpir.ump.edu.my/id/eprint/29625/ http://doi.org/10.11591/ijece.v11i1.pp780-787 |
| _version_ | 1848827284191969280 |
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| author | Abdul-Kadir, Firas Natheer Hashim, Yasir Shakib, Mohammed Nazmus Taha, Faris Hassan |
| author_facet | Abdul-Kadir, Firas Natheer Hashim, Yasir Shakib, Mohammed Nazmus Taha, Faris Hassan |
| author_sort | Abdul-Kadir, Firas Natheer |
| building | UMP Institutional Repository |
| collection | Online Access |
| description | This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics |
| first_indexed | 2025-11-15T03:58:16Z |
| format | Article |
| id | ump-29625 |
| institution | Universiti Malaysia Pahang |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T03:58:16Z |
| publishDate | 2021 |
| publisher | Institute of Advanced Engineering and Science (IAES) |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | ump-296252025-10-03T04:20:02Z https://umpir.ump.edu.my/id/eprint/29625/ Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling Abdul-Kadir, Firas Natheer Hashim, Yasir Shakib, Mohammed Nazmus Taha, Faris Hassan TK Electrical engineering. Electronics Nuclear engineering This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics Institute of Advanced Engineering and Science (IAES) 2021 Article PeerReviewed pdf en cc_by_sa_4 https://umpir.ump.edu.my/id/eprint/29625/1/3.%20Electrical%20characterization%20of%20si%20nanowire%20GAA-TFET.pdf Abdul-Kadir, Firas Natheer and Hashim, Yasir and Shakib, Mohammed Nazmus and Taha, Faris Hassan (2021) Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling. International Journal of Electrical and Computer Engineering (IJECE), 11 (1). pp. 780-787. ISSN 2088-8708. (Published) http://doi.org/10.11591/ijece.v11i1.pp780-787 http://doi.org/10.11591/ijece.v11i1.pp780-787 http://doi.org/10.11591/ijece.v11i1.pp780-787 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Abdul-Kadir, Firas Natheer Hashim, Yasir Shakib, Mohammed Nazmus Taha, Faris Hassan Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling |
| title | Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling |
| title_full | Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling |
| title_fullStr | Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling |
| title_full_unstemmed | Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling |
| title_short | Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling |
| title_sort | electrical characterization of si nanowire gaa-tfet based on dimensions downscaling |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | https://umpir.ump.edu.my/id/eprint/29625/ https://umpir.ump.edu.my/id/eprint/29625/ https://umpir.ump.edu.my/id/eprint/29625/ http://doi.org/10.11591/ijece.v11i1.pp780-787 |