Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of t...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science (IAES)
2021
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| Subjects: | |
| Online Access: | https://umpir.ump.edu.my/id/eprint/29625/ http://doi.org/10.11591/ijece.v11i1.pp780-787 |