Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, 1 noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulat...
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| Format: | Article |
| Language: | English |
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2008
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| Online Access: | http://scholars.utp.edu.my/id/eprint/462/ http://scholars.utp.edu.my/id/eprint/462/1/paper.pdf |
| _version_ | 1848658992727851008 |
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| author | N.H., Hamid A.F., Murray S., Roy |
| author_facet | N.H., Hamid A.F., Murray S., Roy |
| author_sort | N.H., Hamid |
| building | UTP Institutional Repository |
| collection | Online Access |
| description | 1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, 1 noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulation. A technique based on sum-of-sinusoids models 1/f noise while a Monte Carlo based technique is used to generate RTS noise. Lowfrequency noise generated using these models exhibits the correct form of noise characteristics as predicted by theory, with noise parameters from standard 0.35- μm and 35-nm CMOS technology. Implementation of the time-domain model in SPICE shows the utility of the noisy MOSFET model in simulating the effect of lowfrequency noise on the operation of deep-submicrometer analog integrated circuits. © 2008 IEEE.
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| first_indexed | 2025-11-13T07:23:21Z |
| format | Article |
| id | oai:scholars.utp.edu.my:462 |
| institution | Universiti Teknologi Petronas |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-13T07:23:21Z |
| publishDate | 2008 |
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| spelling | oai:scholars.utp.edu.my:4622017-01-19T08:26:39Z http://scholars.utp.edu.my/id/eprint/462/ Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET N.H., Hamid A.F., Murray S., Roy TK Electrical engineering. Electronics Nuclear engineering 1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, 1 noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulation. A technique based on sum-of-sinusoids models 1/f noise while a Monte Carlo based technique is used to generate RTS noise. Lowfrequency noise generated using these models exhibits the correct form of noise characteristics as predicted by theory, with noise parameters from standard 0.35- μm and 35-nm CMOS technology. Implementation of the time-domain model in SPICE shows the utility of the noisy MOSFET model in simulating the effect of lowfrequency noise on the operation of deep-submicrometer analog integrated circuits. © 2008 IEEE. 2008 Article NonPeerReviewed application/pdf en http://scholars.utp.edu.my/id/eprint/462/1/paper.pdf N.H., Hamid and A.F., Murray and S., Roy (2008) Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET. IEEE Transactions on Circuits and Systems I: Regular Papers, 55 (1). pp. 245-257. ISSN 10577122 http://www.scopus.com/inward/record.url?eid=2-s2.0-42949160544&partnerID=40&md5=3cf9baafbffe7671f3e31d470102f62f 10.1109/TCSI.2007.910543 10.1109/TCSI.2007.910543 10.1109/TCSI.2007.910543 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering N.H., Hamid A.F., Murray S., Roy Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET |
| title | Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
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| title_full | Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
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| title_fullStr | Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
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| title_full_unstemmed | Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
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| title_short | Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
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| title_sort | time-domain modeling of low-frequency noise in deep-submicrometer mosfet |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://scholars.utp.edu.my/id/eprint/462/ http://scholars.utp.edu.my/id/eprint/462/ http://scholars.utp.edu.my/id/eprint/462/ http://scholars.utp.edu.my/id/eprint/462/1/paper.pdf |